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agilent atf-501p8 high linearity enhancement mode [1] pseudomorphic hemt in 2x2 mm 2 lpcc [3] package data sheet description agilent technologiess atf- 501p8 is a single-voltage high linearity, low noise e-phemt housed in an 8-lead jedec- standard leadless plastic chip carrier (lpcc [3] ) package. the device is ideal as a medium- power amplifier. its operating frequency range is from 400 mhz to 3.9 ghz. the thermally efficient package measures only 2mm x 2mm x 0.75mm. its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. the device has a point mttf of over 300 years at a mounting temperature of +85oc. all devices are 100% rf & dc tested. features ? single voltage operation ? high linearity and p1db ? low noise figure ? excellent uniformity in product specifications ? small package size: 2.0 x 2.0 x 0.75 mm 3 ? point mttf > 300 years [2] ? msl-1 and lead-free ? tape-and-reel packaging option available specifications ? 2 ghz; 4.5v, 280 ma (typ.) ? 45.5 dbm output ip3 ? 29 dbm output power at 1db gain compression ? 1 db noise figure ? 15 db gain ? 14.5 db lfom [4] ? 65% pae ? 23 o c/w thermal resistance applications ? front-end lna q2 and q3, driver or pre-driver amplifier for cellular/ pcs and wcdma wireless infrastructure ? driver amplifier for wlan, wll/ rll and mmds applications ? general purpose discrete e-phemt for other high linearity applications pin connections and package marking note: package marking provides orientation and identification: 0p = device code x = date code indicates the month of manufacture. notes: 1. enhancement mode technology employs a single positive v gs , eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. refer to reliability datasheet for detailed mttf data. 3. conforms to jedec reference outline mo229 for drp-n. 4. linearity figure of merit (lfom) is essentially oip3 divided by dc bias power. pin 1 (source) pin 2 (gate) pin 3 pin 4 (source) pin 8 pin 7 (drain) pin 6 pin 5 0px top view pin 8 source (thermal/rf gnd) pin 7 (drain) pin 6 pin 5 pin 1 (source) pin 2 (gate) pin 3 pin 4 (source) bottom view attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 1b) refer to agilent application note a004r: electrostatic discharge damage and control.
2 atf-501p8 absolute maximum ratings [1] absolute symbol parameter units maximum v ds drain C source voltage [2] v7 v gs gate C source voltage [2] v -5 to 0.8 v gd gate drain voltage [2] v -5 to 1 i ds drain current [2] a1 i gs gate current ma 12 p diss total power dissipation [3] w 3.5 p in max. rf input power dbm 30 t ch channel temperature c 150 t stg storage temperature c -65 to 150 ch_b thermal resistance [4] c/w 23 notes: 1. operation of this device in excess of any one of these parameters may cause permanent damage. 2. assumes dc quiescent conditions. 3. board (package belly) temperaturet b is 25 c. derate 43.5 mw/ c for t b > 69.5 c. 4. channel-to-board thermal resistance measured using 150 c liquid crystal measurement method. notes: 5. distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. measurements are made on production test board, which represents a trade-off between optimal oip3, p1db and vswr. circuit losses have been de-embedded from actual measurements. figure 1. typical iv curve (vgs = 0.01v) per step. vds (v) ids (ma) 06 1 2 3 4 5 800 700 600 500 400 300 200 100 0 vgs=0.6v vgs=0.55v vgs=0.5v vgs=0.7v vgs=0.65v product consistency distribution charts at 2 ghz, 4.5v, 200 ma [5,6] figure 2. p1db. p1db (dbm) 27.5 30.5 28 28.5 29 29.5 30 120 100 80 60 40 20 0 cpk=1.76 stdev=0.3 +3 std C 3 std figure 3. pae. pae (%) 45 85 55 65 75 120 100 80 60 40 20 0 cpk=1.51 stdev=3.38 +3 std C 3 std figure 4. gain. gain (db) 13 17 14 15 16 100 80 60 40 20 0 cpk=1.61 stdev=0.33 +3 std C 3 std figure 5. oip3. oip3 (dbm) 42 50 43 44 45 46 47 48 49 100 80 60 40 20 0 cpk=1.1 stdev=0.87 +3 std C 3 std
3 atf-501p8 electrical specifications t a = 25 c, dc bias for rf parameters is vds = 4.5v and ids = 280 ma unless otherwise specified. symbol parameter and test condition units min. typ. max. vgs operational gate voltage vds = 4.5v, ids = 280 ma v 0.42 0.55 0.67 vth threshold voltage vds = 4.5v, ids = 32 ma v 0.33 idss saturated drain current vds = 4.5v, vgs = 0v a 5 gm transconductance vds = 4.5v, gm = ? ids/ ? vgs; mmho 1872 ? vgs = vgs1 C vgs2 vgs1 = 0.55v, vgs2 = 0.5v igss gate leakage current vds = 0v, vgs = -4.5v a -30 -0.8 nf noise figure [1] f = 2 ghz db 1 f = 900 mhz db g gain [1] f = 2 ghz db 13.5 15 16.5 f = 900 mhz db 16.6 oip3 output 3 rd order intercept point [1,2] f = 2 ghz dbm 43 45.5 f = 900 mhz dbm 42 p1db output 1db compressed [1] f = 2 ghz dbm 27.5 29 f = 900 mhz dbm 27.3 pae power added efficiency [1] f = 2 ghz % 50 65 f = 900 mhz % 49 aclr adjacent channel leakage offset bw = 5 mhz dbc 63.9 power ratio [1,3] offset bw = 10 mhz dbc 64.1 notes: 1. measurements at 2 ghz obtained using production test board described in figure 2 while measurement at 0.9ghz obtained from loa d pull tuner. 2. i ) 2 ghz oip3 test condition: f1 = 2.0 ghz, f2 = 2.01 ghz and pin = -5 dbm per tone. ii ) 900 mhz oip3 test condition: f1 = 900 mhz, f2 = 910 mhz and pin = -5dbm per tone. 3. aclr test spec is based on 3gpp ts 25.141 v5.3.1 (2002-06) - test model 1 - active channels: pccpch + sch + cpich + pich + sccpch + 64 dpch (sf=128) - freq = 2140 mhz - pin = -5 dbm - channel integrate bandwidth = 3.84 mhz 4. use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded. see absolute max ratings and application note for more details. figure 6. block diagram of the 2 ghz production test board used for nf, gain, oip3 , p1db and pae measurements at 2 ghz. this c ircuit achieves a trade-off between optimal oip3, p1db and vswr. circuit losses have been de-embedded from actual measurements. input outpu t 50 ohm transmission line and drain bias t (0.3 db loss) 50 ohm transmission line and drain bias t (0.3 db loss) output matching circuit _mag=0.69 _ang=-163 (0.9 db loss) input matching circuit _mag=0.79 _ang=-164 (1.1 db loss) dut
4 gamma load and source at optimum oip3 and p1db tuning conditions the device s optimum oip3 and p1db measurements were determined using a load pull system at 4.5v 280 ma and 4.5v 400 ma quiesent bias respectively: figure 3. simplified schematic of production test board. primary purpose is to show 15 ohm series resistor placement in gate supply. transmission line tapers, tee intersections, bias lines and parasitic values are not shown. typical gammas at optimum oip3 at 4.5v 280 ma optimized for maximum oip3 at 4.5v 280 ma freq (ghz) oip3 gain p1db pae gamma source gamma load 0.9 46.42 16.03 26.67 45.80 0.305 < -140 0.577 < 162 2.0 45.50 15.07 28.93 50.30 0.806 < -179.2 0.511 < 164 2.4 44.83 12.97 29.03 45.70 0.756 < -167 0.589 < -168 3.9 43.97 6.11 27.33 33.90 0.782 < -162 0.524 < -153 typical gammas at optimum p1db at 4.5v 280ma optimized for maximum p1db at 4.5v 280 ma freq (ghz) oip3 gain p1db pae gamma source gamma load 0.9 39.29 20.90 30.49 41.00 0.859 < 165 0.757 < 179 2.0 41.79 14.72 30.60 45.30 0.76 < -171 0.691 < -168 2.4 42.37 11.25 30.24 39.70 0.745 < -166 0.694 < -161 3.9 42.00 5.63 28.26 25.80 0.759 < -159 0.708 < -149 rf input 2.2 f gate supply drain supply 15 ohm 15 nh 1.8 nh 1.2 pf 50 ohm .02 50 ohm .02 110 ohm .03 110 ohm .03 1.2 pf 3.3 nh rf outpu t 47 nh 2.2 f dut typical gammas at optimum oip3 at 4.5v 400 ma optimized for maximum oip3 at 4.5v 400 ma freq (ghz) oip3 gain p1db pae gamma source gamma load 0.9 49.15 16.85 27.86 44.20 0.5852 < -135.80 0.4785 < 177.00 2.0 48.18 14.72 29.36 48.89 0.7267 < -175.37 0.7338 < 179.56 2.4 47.54 12.47 29.10 46.83 0.6155 < -171.71 0.5411 < -172.02 3.9 45.44 8.05 28.49 37.02 0.7888 < -148.43 0.5247 < -145.84 typical gammas at optimum p1db at 4.5v 400 ma optimized for maximum p1db at 4.5v 400 ma freq (ghz) oip3 gain p1db pae gamma source gamma load 0.9 41.78 21.84 31.23 49.97 0.7765 < 168.50 0.7589 < -175.09 2.0 43.28 14.83 31.03 44.78 0.8172 < -175.74 0.8011 < -165.75 2.4 42.46 11.90 30.66 41.00 0.8149 < -163.78 0.8042 < -161.79 3.9 42.94 7.70 29.56 33.06 0.8394 < -151.21 0.7826 < -149.00
5 atf-501p8 typical performance curves (at 25 c unless specified otherwise) tuned for optimal oip3 at 4.5v 280 ma figure 8. oip3 vs. idq and vds at 2 ghz. idq (ma) oip3 (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 55 50 45 40 35 30 4.5v 5.5v 3.5v figure 9. oip3 vs. idq and vds at 0.9 ghz. idq (ma) oip3 (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 55 50 45 40 35 30 4.5v 5.5v 3.5v figure 10. p1db vs. idq and vds at 2 ghz. idq (ma) p1db (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 35 30 25 20 15 4.5v 5.5v 3.5v figure 11. p1db vs. idq and vds at 0.9 ghz. idq (ma) p1db (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 35 30 25 20 15 4.5v 5.5v 3.5v figure 12. gain vs. idq and vds at 2 ghz. idq (ma) gain (db) 200 640 240 280 320 360 400 440 480 520 560 600 25 20 15 10 5 0 4.5v 5.5v 3.5v figure 13. gain vs. idq and vds at 0.9 ghz. idq (ma) gain (db) 200 640 240 280 320 360 400 440 480 520 560 600 25 20 15 10 5 0 4.5v 5.5v 3.5v figure 14. pae vs. idq and vds at 2 ghz. idq (ma) pae (%) 200 640 240 280 320 360 400 440 480 520 560 600 60 50 40 30 20 10 0 4.5v 5.5v 3.5v figure 15. pae vs. idq and vds at 0.9 ghz. idq (ma) pae (%) 200 640 240 280 320 360 400 440 480 520 560 600 60 50 40 30 20 10 0 4.5v 5.5v 3.5v
6 atf-501p8 typical performance curves (at 25 c unless specified otherwise) tuned for optimal p1db at 4.5v 280 ma figure 16. oip3 vs. idq and vds at 2 ghz. idq (ma) oip3 (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 55 50 45 40 35 30 4.5v 5.5v 3.5v figure 17. oip3 vs. idq and vds at 0.9 ghz. idq (ma) oip3 (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 55 50 45 40 35 30 4.5v 5.5v 3.5v figure 18. p1db vs. idq and vds at 2 ghz. idq (ma) p1db (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 35 30 25 20 15 4.5v 5.5v 3.5v figure 19. p1db vs. idq and vds at 0.9 ghz. idq (ma) p1db (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 35 30 25 20 15 4.5v 5.5v 3.5v figure 20. gain vs. idq and vds at 2 ghz. idq (ma) gain (db) 200 640 240 280 320 360 400 440 480 520 560 600 25 20 15 10 5 0 4.5v 5.5v 3.5v figure 21. gain vs. idq and vds at 0.9 ghz. idq (ma) gain (db) 200 640 240 280 320 360 400 440 480 520 560 600 25 20 15 10 5 0 4.5v 5.5v 3.5v figure 22. pae vs. idq and vds at 2 ghz. idq (ma) pae (%) 200 640 240 280 320 360 400 440 480 520 560 600 60 50 40 30 20 10 0 4.5v 5.5v 3.5v figure 23. pae vs. idq and vds at 0.9 ghz. idq (ma) pae (%) 200 640 240 280 320 360 400 440 480 520 560 600 60 50 40 30 20 10 0 4.5v 5.5v 3.5v
7 atf-501p8 typical performance curves (at 25 c unless specified otherwise) tuned for optimum oip3 at 4.5v 280 ma figure 24. oip3 vs. temperature and frequency at optimal oip3. frequency (ghz) oip3 (dbm) 0.5 4 1 1.5 2 2.5 3 3.5 50 40 30 20 10 0 -40 c 25 c 85 c figure 25. oip3 vs. temperature and frequency at optimal p1db. frequency (ghz) oip3 (dbm) 0.5 4 1 1.5 2 2.5 3 3.5 50 40 30 20 10 0 -40 c 25 c 85 c figure 26. p1db vs. temperature and frequency at optimal oip3. frequency (ghz) p1db (dbm) 0.5 4 1 1.5 2 2.5 3 3.5 35 30 25 20 15 -40 c 25 c 85 c figure 27. p1db vs. temperature and frequency at optimal p1db. frequency (ghz) p1db (dbm) 0.5 4 1 1.5 2 2.5 3 3.5 35 30 25 20 15 -40 c 25 c 85 c figure 28. gain vs. temperature and frequency at optimal oip3. frequency (ghz) gain (db) 0.5 4 1 1.5 2 2.5 3 3.5 20 15 10 5 0 -40 c 25 c 85 c figure 29. gain vs. temperature and frequency at optimal p1db. frequency (ghz) gain (db) 0.5 4 1 1.5 2 2.5 3 3.5 25 20 15 10 5 0 -40 c 25 c 85 c figure 30. pae vs. temperature and frequency at optimal oip3. frequency (ghz) pae (%) 0.5 4 1 1.5 2 2.5 3 3.5 60 50 40 30 20 10 0 -40 c 25 c 85 c figure 31. pae vs. temperature and frequency at optimal p1db. frequency (ghz) pae (%) 0.5 4 1 1.5 2 2.5 3 3.5 100 80 60 40 20 0 -40 c 25 c 85 c
8 atf-501p8 typical performance curves (at 25 c unless specified otherwise) tuned for optimal oip3 at 4.5v 400 ma figure 32. oip3 vs. ids and vds at 2 ghz. ids (ma) oip3 (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 55 50 45 40 35 30 4.5v 5.5v 3.5v figure 33. oip3 vs. ids and vds at 900 mhz. ids (ma) oip3 (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 55 50 45 40 35 30 4.5v 5.5v 3.5v figure 34. p1db vs. ids and vds at 2 ghz. ids (ma) p1db (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 35 30 25 20 15 4.5v 5.5v 3.5v figure 35. p1db vs. ids and vds at 900 mhz. ids (ma) p1db (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 35 30 25 20 15 4.5v 5.5v 3.5v figure 36. gain vs. ids and vds at 2 ghz. ids (ma) gain 200 640 240 280 320 360 400 440 480 520 560 600 25 20 15 10 5 0 4.5v 5.5v 3.5v figure 38. pae vs. ids and vds at 2 ghz. ids (ma) pae (%) 200 640 240 280 320 360 400 440 480 520 560 600 60 50 40 30 20 10 0 4.5v 5.5v 3.5v figure 39. pae vs. ids and vds at 900 mhz. ids (ma) pae (%) 200 640 240 280 320 360 400 440 480 520 560 600 60 50 40 30 20 10 0 4.5v 5.5v 3.5v figure 37. gain vs. ids and vds at 900 mhz. ids (ma) gain 200 640 240 280 320 360 400 440 480 520 560 600 25 20 15 10 5 0 4.5v 5.5v 3.5v figure 40. oip3 vs. temperature and frequency at optimum oip3. frequency (ghz) oip3 (dbm) 0.5 4 1 1.5 2 2.5 3 3.5 50 40 30 20 10 0 -40 c 25 c 85 c note: bias current (ids) for the above charts are quiescent conditions. actual level may increase or decrease depending on amount of rf drive.
9 figure 41. oip3 vs. temperature and frequency at optimum p1db. frequency (ghz) oip3 (dbm) 0.5 4 1 1.5 2 2.5 3 3.5 0.5 4 1 1.5 2 2.5 3 3.5 0.5 4 1 1.5 2 2.5 3 3.5 0.5 4 1 1.5 2 2.5 3 3.5 50 40 30 20 10 0 figure 42. p1db vs. temperature and frequency at optimum oip3. frequency (ghz) p1db (dbm) 35 30 25 20 15 figure 43. p1db vs. temperature and frequency at optimum p1db. frequency (ghz) p1db (dbm) 35 30 25 20 15 figure 44. gain vs. temperature and frequency at optimum oip3. frequency (ghz) gain (db) 20 15 10 5 0 figure 45. gain vs. temperature and frequency at optimum p1db. frequency (ghz) gain (db) -40 c 25 c 85 c -40 c 25 c 85 c -40 c 25 c 85 c -40 c 25 c 85 c 0.5 4 1 1.5 2 2.5 3 3.5 -40 c 25 c 85 c 25 20 15 10 5 0 0.5 4 1 1.5 2 2.5 3 3.5 figure 47. pae vs. temperature and frequency at optimum p1db. frequency (ghz) pae (%) 100 80 60 40 20 0 -40 c 25 c 85 c figure 48. oip3 vs. ids and vds at 2 ghz. ids (ma) oip3 (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 55 50 45 40 35 30 4.5v 5.5v 3.5v 0.5 4 1 1.5 2 2.5 3 3.5 figure 46. pae vs. temperature and frequency at optimum oip3. frequency (ghz) pae (%) 100 80 60 40 20 0 -40 c 25 c 85 c figure 49. oip3 vs. ids and vds at 900 mhz. ids (ma) oip3 (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 55 50 45 40 35 30 4.5v 5.5v 3.5v atf-501p8 typical performance curves, continued (at 25 c unless specified otherwise) tuned for optimal oip3 at 4.5v 400 ma note: bias current (ids) for the above charts are quiescent conditions. actual level may increase or decrease depending on amount of rf drive.
10 figure 50. p1db vs. ids and vds at 2 ghz. ids (ma) p1db (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 35 30 25 20 15 4.5v 5.5v 3.5v figure 51. p1db vs. ids and vds at 900 mhz. ids (ma) p1db (dbm) 200 640 240 280 320 360 400 440 480 520 560 600 35 30 25 20 15 4.5v 5.5v 3.5v figure 52. gain vs. ids and vds at 2 ghz. ids (ma) gain 200 640 240 280 320 360 400 440 480 520 560 600 25 20 15 10 5 0 4.5v 5.5v 3.5v figure 53. gain vs. ids and vds at 900 mhz. ids (ma) gain 200 640 240 280 320 360 400 440 480 520 560 600 30 25 20 15 10 5 4.5v 5.5v 3.5v figure 54. pae vs. ids and vds at 2 ghz. ids (ma) pae (%) 200 640 240 280 320 360 400 440 480 520 560 600 60 50 40 30 20 10 0 4.5v 5.5v 3.5v figure 55. pae vs. ids and vds at 900 mhz. ids (ma) pae (%) 200 640 240 280 320 360 400 440 480 520 560 600 80 60 40 20 0 4.5v 5.5v 3.5v atf-501p8 typical performance curves, continued (at 25 c unless specified otherwise) tuned for optimal p1db at 4.5v 400 ma note: bias current (ids) for the above charts are quiescent conditions. actual level may increase or decrease depending on amount of rf drive.
11 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. atf-501p8 typical scattering parameters, v ds = 4.5v, i ds = 280 ma freq. s 11 s 21 s 12 s 22 msg/mag k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db factor 0.1 0.915 -132.3 31.6 37.990 112.2 -38.4 0.012 29.3 0.647 -160.6 35.0 0.173 0.2 0.911 -156.2 26.2 20.324 99.9 -37.7 0.013 24.0 0.689 -171.1 31.9 0.314 0.3 0.910 -165.4 22.8 13.783 94.5 -37.1 0.014 24.5 0.699 -175.7 29.9 0.436 0.4 0.910 -170.9 20.3 10.342 91.1 -37.1 0.014 27.3 0.702 -178.5 28.7 0.569 0.5 0.908 -173.4 18.7 8.604 88.4 -36.5 0.015 29.6 0.691 -179.9 27.6 0.648 0.6 0.907 -176.1 17.1 7.194 86.1 -35.9 0.016 32.4 0.691 178.5 26.5 0.736 0.7 0.908 -178.5 15.8 6.167 84.1 -35.4 0.017 34.4 0.694 177.2 25.6 0.800 0.8 0.905 179.8 14.7 5.407 82.1 -34.9 0.018 36.3 0.695 175.2 24.8 0.871 0.9 0.909 178.2 13.6 4.799 80.3 -34.4 0.019 38.3 0.692 175.1 24.0 0.906 1 0.909 176.6 12.7 4.308 78.3 -34.0 0.020 39.9 0.692 173.9 23.3 0.953 1.5 0.902 170.5 9.1 2.859 70.3 -31.7 0.026 45.0 0.698 169.4 18.2 1.128 2 0.902 166.0 7.1 2.264 64.4 -30.5 0.030 46.9 0.700 165.6 16.0 1.209 2.5 0.901 165.0 6.6 2.134 63.1 -30.2 0.031 47.2 0.699 163.0 15.4 1.241 3 0.901 161.1 5.0 1.772 57.7 -28.9 0.036 47.4 0.697 159.1 13.8 1.278 4 0.898 155.0 3.0 1.412 49.3 -27.3 0.043 46.5 0.707 153.7 11.7 1.326 5 0.902 145.0 0.9 1.110 37.6 -24.7 0.058 43.5 0.699 146.8 9.7 1.272 6 0.893 134.9 -0.9 0.902 22.6 -22.9 0.072 35.6 0.697 145.3 7.8 1.286 7 0.899 125.8 -3.3 0.687 9.0 -22.2 0.078 27.3 0.652 134.1 5.7 1.394 8 0.895 115.6 -4.4 0.604 -1.1 -20.8 0.091 22.0 0.646 117.4 4.2 1.463 9 0.898 105.5 -5.3 0.542 -13.0 -19.6 0.105 12.3 0.641 115.5 3.2 1.447 10 0.886 95.5 -5.9 0.505 -20.2 -18.9 0.114 9.7 0.695 104.5 2.5 1.455 11 0.868 84.7 -6.6 0.469 -29.7 -17.6 0.132 0.5 0.742 91.3 1.6 1.431 12 0.862 74.0 -8.0 0.398 -40.8 -17.4 0.135 -6.3 0.735 88.1 -0.1 1.661 13 0.847 64.5 -7.9 0.403 -47.5 -16.0 0.159 -12.3 0.766 78.4 -0.1 1.491 14 0.844 55.6 -8.5 0.377 -58.4 -15.3 0.171 -21.3 0.800 68.9 -0.3 1.397 15 0.837 47.4 -9.0 0.354 -67.2 -14.6 0.187 -30.1 0.797 65.6 -1.1 1.414 16 0.824 39.9 -9.7 0.327 -72.0 -14.2 0.194 -36.8 0.763 51.5 -2.3 1.608 17 0.821 31.6 -9.8 0.323 -82.7 -13.4 0.215 -44.6 0.786 38.9 -2.4 1.488 18 0.805 24.6 -10.5 0.298 -90.1 -12.5 0.237 -51.8 0.781 29.5 -3.5 1.575 figure 56. msg/mag & |s21| 2 vs. frequency at 4.5v 280ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 s21 msg mag
12 atf-501p8 typical scattering parameters, v ds = 4.5v, i ds = 200 ma freq. s 11 s 21 s 12 s 22 msg/mag k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db factor 0.1 0.922 -131.5 31.1 35.978 112.6 -37.7 0.013 28.9 0.664 -159.8 34.4 0.142 0.2 0.914 -155.7 25.7 19.290 100.1 -36.5 0.015 22.4 0.709 -170.7 31.1 0.274 0.3 0.914 -165.2 22.3 13.088 94.7 -36.5 0.015 22.5 0.719 -175.4 29.4 0.390 0.4 0.911 -170.5 19.8 9.814 91.4 -35.9 0.016 24.9 0.722 -178.4 27.9 0.510 0.5 0.911 -173.3 18.3 8.176 88.6 -35.4 0.017 26.8 0.713 -179.9 26.8 0.577 0.6 0.912 -176.0 16.7 6.834 86.4 -34.9 0.018 29.3 0.713 178.6 25.8 0.653 0.7 0.910 -178.3 15.4 5.861 84.3 -34.4 0.019 31.3 0.716 177.2 24.9 0.725 0.8 0.910 179.9 14.2 5.141 82.3 -34.4 0.019 33.0 0.718 175.5 24.3 0.801 0.9 0.913 178.4 13.2 4.558 80.5 -34.0 0.020 34.9 0.712 175.0 23.6 0.840 1 0.910 176.8 12.2 4.092 78.7 -33.6 0.021 36.6 0.714 173.8 22.9 0.903 1.5 0.904 170.5 8.7 2.718 70.5 -31.4 0.027 41.7 0.721 169.0 18.3 1.077 2 0.905 166.1 6.7 2.153 64.9 -30.2 0.031 44.2 0.721 165.2 16.0 1.161 2.5 0.905 165.2 6.1 2.027 63.7 -29.9 0.032 44.5 0.719 162.5 15.4 1.188 3 0.906 161.1 4.5 1.684 58.3 -28.6 0.037 44.9 0.715 158.5 13.7 1.227 4 0.905 154.9 2.6 1.354 50.3 -27.1 0.044 44.3 0.725 152.9 11.8 1.262 5 0.904 145.1 0.4 1.053 38.5 -24.7 0.058 41.6 0.716 145.7 9.5 1.271 6 0.899 134.9 -1.3 0.863 23.9 -22.9 0.072 34.1 0.712 144.1 7.7 1.263 7 0.905 126.0 -3.6 0.661 10.5 -22.2 0.078 26.0 0.660 132.9 5.6 1.371 8 0.902 115.8 -4.6 0.587 0.3 -20.8 0.091 20.8 0.654 116.3 4.2 1.423 9 0.900 106.4 -5.6 0.527 -11.1 -19.6 0.105 11.1 0.649 114.4 3.0 1.451 10 0.894 95.9 -6.1 0.498 -17.7 -18.9 0.114 8.4 0.700 103.4 2.6 1.412 11 0.882 84.9 -7.0 0.448 -26.8 -17.7 0.130 -0.9 0.746 90.5 1.6 1.407 12 0.873 74.3 -8.1 0.393 -38.8 -17.5 0.133 -7.5 0.738 87.3 0.1 1.614 13 0.856 64.6 -8.1 0.393 -45.4 -16.1 0.156 -13.1 0.768 77.8 -0.1 1.492 14 0.853 56.0 -8.4 0.380 -55.0 -15.6 0.166 -21.4 0.800 68.4 -0.2 1.399 15 0.837 47.4 -8.8 0.361 -64.1 -14.8 0.182 -29.6 0.799 65.2 -1.0 1.439 16 0.829 40.6 -9.2 0.345 -72.0 -14.4 0.190 -35.9 0.763 51.1 -1.8 1.556 17 0.828 32.7 -9.5 0.336 -80.5 -13.4 0.213 -43.3 0.787 38.5 -2.0 1.449 18 0.807 26.1 -10.2 0.310 -88.2 -12.5 0.236 -50.5 0.782 29.1 -3.2 1.542 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. figure 57. msg/mag & |s21| 2 vs. frequency at 4.5v 200ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 s21 msg mag
13 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. atf-501p8 typical scattering parameters, v ds = 4.5v, i ds = 360 ma freq. s 11 s 21 s 12 s 22 msg/mag k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db factor 0.1 0.911 -132.8 31.6 38.110 112.4 -39.2 0.011 30.3 0.649 -162.1 35.4 0.200 0.2 0.910 -156.5 26.2 20.415 100.0 -38.4 0.012 24.9 0.692 -171.8 32.3 0.340 0.3 0.911 -165.8 22.8 13.848 94.6 -37.7 0.013 26.2 0.701 -176.2 30.3 0.472 0.4 0.913 -171.1 20.3 10.397 91.3 -37.7 0.013 28.9 0.704 -178.9 29.0 0.600 0.5 0.907 -173.7 18.7 8.640 88.5 -36.5 0.015 31.8 0.693 179.7 27.6 0.679 0.6 0.910 -176.3 17.2 7.232 86.2 -35.9 0.016 34.5 0.694 178.2 26.6 0.747 0.7 0.910 -178.6 15.8 6.200 84.2 -35.9 0.016 36.8 0.696 176.9 25.9 0.838 0.8 0.906 179.7 14.7 5.431 82.2 -35.4 0.017 38.8 0.697 175.6 25.0 0.914 0.9 0.913 178.0 13.7 4.826 80.3 -34.9 0.018 40.6 0.695 174.8 24.3 0.930 1 0.907 176.4 12.7 4.328 78.4 -34.0 0.020 42.3 0.694 173.7 23.4 0.984 1.5 0.904 170.3 9.2 2.878 70.4 -32.0 0.025 47.0 0.698 169.4 18.2 1.154 2 0.906 165.9 7.1 2.275 64.5 -30.5 0.030 48.7 0.702 165.5 16.1 1.193 2.5 0.904 164.8 6.6 2.146 63.2 -30.2 0.031 49.0 0.701 162.8 15.5 1.231 3 0.907 160.9 5.0 1.783 57.9 -28.9 0.036 49.0 0.699 159.0 14.0 1.246 4 0.906 154.7 3.1 1.424 49.4 -27.3 0.043 47.7 0.708 153.6 12.0 1.275 5 0.903 144.8 0.9 1.114 37.7 -24.7 0.058 44.2 0.701 146.7 9.7 1.268 6 0.896 134.7 -0.8 0.907 22.7 -22.7 0.073 36.2 0.699 145.1 7.9 1.256 7 0.903 125.6 -3.2 0.691 8.9 -22.2 0.078 27.9 0.654 134.0 5.9 1.355 8 0.903 115.0 -4.3 0.612 -1.0 -20.7 0.092 22.4 0.647 117.3 4.6 1.375 9 0.891 105.6 -5.3 0.544 -13.3 -19.5 0.106 12.8 0.642 115.4 2.9 1.495 10 0.885 94.9 -6.0 0.504 -20.0 -18.8 0.115 10.2 0.697 104.4 2.4 1.462 11 0.873 84.3 -6.7 0.465 -28.4 -17.5 0.133 0.9 0.743 91.3 1.6 1.416 12 0.866 74.0 -7.9 0.403 -41.1 -17.3 0.137 -5.8 0.735 87.9 0.1 1.607 13 0.849 64.3 -7.8 0.406 -47.3 -15.9 0.161 -12.1 0.768 78.3 0.0 1.464 14 0.849 55.7 -8.4 0.379 -57.9 -15.2 0.174 -21.3 0.801 68.8 -0.2 1.361 15 0.841 46.6 -9.0 0.353 -69.0 -14.5 0.189 -30.3 0.800 65.5 -0.9 1.376 16 0.828 39.0 -9.4 0.337 -73.1 -14.2 0.196 -37.1 0.763 51.4 -2.0 1.547 17 0.817 31.0 -9.8 0.322 -83.0 -13.2 0.218 -45.1 0.787 38.7 -2.4 1.491 18 0.809 23.9 -10.3 0.304 -92.7 -12.4 0.240 -52.4 0.783 29.3 -3.2 1.513 figure 58. msg/mag & |s21| 2 vs. frequency at 4.5v 360ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 s21 msg mag
14 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. atf-501p8 typical scattering parameters, v ds = 3.5v, i ds = 280 ma freq. s 11 s 21 s 12 s 22 msg/mag k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db factor 0.1 0.923 -133.9 30.6 34.047 111.6 -38.4 0.012 28.8 0.716 -164.7 34.5 0.166 0.2 0.922 -157.1 25.2 18.161 99.7 -37.7 0.013 23.8 0.759 -173.4 31.5 0.301 0.3 0.920 -166.1 21.8 12.313 94.5 -37.1 0.014 25.0 0.767 -177.3 29.4 0.427 0.4 0.920 -171.3 19.3 9.220 91.4 -37.1 0.014 27.5 0.770 -179.8 28.2 0.549 0.5 0.915 -173.9 17.7 7.674 88.7 -35.9 0.016 30.0 0.760 178.8 26.8 0.622 0.6 0.917 -176.5 16.2 6.429 86.6 -35.4 0.017 32.9 0.761 177.2 25.8 0.697 0.7 0.917 -178.9 14.8 5.511 84.6 -34.9 0.018 34.8 0.762 175.8 24.9 0.761 0.8 0.915 179.6 13.6 4.813 82.8 -34.9 0.018 37.2 0.760 175.0 24.3 0.843 0.9 0.918 177.7 12.7 4.302 81.0 -34.4 0.019 38.8 0.764 173.7 23.5 0.877 1 0.913 176.4 11.7 3.850 79.1 -33.6 0.021 40.5 0.759 172.4 22.6 0.930 1.5 0.913 170.4 8.1 2.555 72.0 -31.4 0.027 45.6 0.759 168.1 18.1 1.070 2 0.913 166.1 6.1 2.025 66.3 -30.2 0.031 47.1 0.763 163.9 15.9 1.139 2.5 0.910 164.8 5.6 1.912 65.1 -29.9 0.032 47.6 0.762 161.0 15.2 1.181 3 0.913 160.9 4.0 1.588 60.4 -28.6 0.037 47.5 0.758 156.7 13.6 1.206 4 0.906 154.6 2.1 1.276 52.2 -26.9 0.045 45.9 0.762 150.9 11.5 1.261 5 0.910 144.7 0.1 1.012 41.6 -24.4 0.060 42.4 0.754 143.3 9.4 1.226 6 0.903 134.6 -1.6 0.827 27.2 -22.5 0.075 34.3 0.742 141.3 7.5 1.239 7 0.907 125.4 -3.9 0.636 14.0 -22.0 0.079 25.3 0.674 130.1 5.3 1.402 8 0.903 115.2 -4.9 0.570 5.1 -20.6 0.093 19.8 0.669 113.5 3.9 1.448 9 0.897 105.5 -5.6 0.522 -7.0 -19.4 0.107 9.9 0.666 112.0 2.8 1.484 10 0.889 94.8 -6.0 0.499 -14.5 -18.8 0.115 7.0 0.709 100.9 2.4 1.458 11 0.880 84.2 -6.4 0.477 -23.6 -17.7 0.131 -2.4 0.754 88.2 1.9 1.378 12 0.870 73.4 -7.7 0.411 -33.8 -17.6 0.132 -9.1 0.745 85.0 0.3 1.614 13 0.847 63.8 -7.5 0.421 -41.1 -16.3 0.153 -14.5 0.770 75.9 0.1 1.519 14 0.839 55.1 -8.0 0.397 -52.2 -15.8 0.163 -22.5 0.801 66.5 -0.1 1.458 15 0.816 47.3 -8.2 0.390 -63.9 -15.0 0.178 -30.0 0.795 63.4 -0.8 1.495 16 0.808 39.8 -9.2 0.345 -70.3 -14.6 0.186 -35.9 0.755 49.5 -2.3 1.727 17 0.794 32.3 -9.0 0.354 -81.5 -13.5 0.211 -43.3 0.787 36.6 -2.1 1.538 18 0.769 26.0 -9.7 0.329 -91.7 -12.6 0.234 -50.7 0.777 27.7 -3.2 1.632 figure 59. msg/mag & |s21| 2 vs. frequency at 3.5v 280ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 s21 msg mag
15 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. atf-501p8 typical scattering parameters, v ds = 3.5v, i ds = 200 ma freq. s 11 s 21 s 12 s 22 msg/mag k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db factor 0.1 0.924 -132.7 30.5 33.400 112.1 -37.1 0.014 28.4 0.703 -162.3 33.8 0.150 0.2 0.919 -156.5 25.0 17.862 99.9 -36.5 0.015 22.1 0.749 -172.1 30.8 0.269 0.3 0.918 -165.7 21.7 12.118 94.6 -36.5 0.015 22.7 0.757 -176.5 29.1 0.390 0.4 0.918 -171.0 19.2 9.080 91.4 -35.9 0.016 24.6 0.760 -179.2 27.5 0.496 0.5 0.918 -173.6 17.6 7.556 88.7 -35.4 0.017 26.4 0.751 179.4 26.5 0.559 0.6 0.915 -176.2 16.0 6.328 86.5 -34.9 0.018 29.3 0.752 177.7 25.5 0.651 0.7 0.915 -178.5 14.7 5.422 84.5 -34.4 0.019 31.3 0.753 176.3 24.6 0.717 0.8 0.914 179.8 13.5 4.739 82.7 -34.0 0.020 33.2 0.752 175.3 23.7 0.777 0.9 0.919 178.0 12.5 4.232 80.8 -33.6 0.021 35.1 0.755 174.1 23.0 0.806 1 0.916 176.7 11.6 3.788 79.0 -33.2 0.022 36.7 0.750 172.8 22.4 0.870 1.5 0.912 170.5 8.0 2.515 71.5 -31.4 0.027 42.0 0.750 168.3 18.2 1.057 1.9 0.911 166.0 6.0 1.991 65.8 -29.9 0.032 44.3 0.755 165.0 15.8 1.126 2 0.910 164.9 5.5 1.882 64.7 -29.6 0.033 44.7 0.753 164.2 15.2 1.157 2.4 0.911 160.9 3.9 1.562 59.7 -28.6 0.037 45.0 0.750 161.3 13.5 1.215 3 0.909 154.7 2.0 1.255 51.5 -26.9 0.045 43.9 0.754 157.0 11.5 1.244 4 0.911 144.8 -0.1 0.988 40.4 -24.4 0.060 41.0 0.746 151.3 9.3 1.225 5 0.902 134.8 -1.8 0.813 25.9 -22.6 0.074 33.3 0.735 143.7 7.4 1.255 6 0.904 125.5 -4.1 0.624 12.7 -22.0 0.079 24.6 0.669 141.8 5.0 1.438 7 0.904 115.6 -5.1 0.555 3.9 -20.6 0.093 19.3 0.664 130.6 3.8 1.455 8 0.901 105.6 -5.9 0.509 -8.3 -19.4 0.107 9.5 0.662 113.9 2.7 1.466 9 0.897 95.4 -6.4 0.477 -14.5 -18.8 0.115 6.6 0.705 112.3 2.3 1.437 10 0.880 84.1 -6.9 0.450 -23.9 -17.7 0.130 -3.0 0.751 101.2 1.5 1.429 11 0.872 73.7 -8.1 0.393 -34.0 -17.6 0.132 -9.7 0.742 88.5 0.0 1.646 12 0.849 64.2 -7.8 0.408 -42.5 -16.4 0.152 -14.9 0.767 85.3 0.0 1.539 13 0.841 55.5 -8.2 0.391 -53.2 -15.8 0.162 -22.8 0.798 76.2 -0.2 1.465 14 0.820 47.1 -8.5 0.377 -63.5 -15.1 0.176 -29.9 0.793 66.8 -1.0 1.527 15 0.809 39.3 -9.0 0.354 -69.5 -14.7 0.185 -35.9 0.754 63.6 -2.1 1.708 16 0.794 32.7 -9.1 0.350 -84.1 -13.6 0.210 -43.1 0.785 49.8 -2.1 1.543 17 0.770 25.8 -9.6 0.332 -89.0 -12.6 0.234 -50.5 0.776 36.9 -3.1 1.634 18 0.766 21.5 -9.2 0.346 -99.8 -11.5 0.266 -60.7 0.797 28.0 -2.6 1.394 figure 60. msg/mag & |s21| 2 vs. frequency at 3.5v 200ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 s21 msg mag
16 atf-501p8 typical scattering parameters, v ds = 3.5v, i ds = 360 ma freq. s 11 s 21 s 12 s 22 msg/mag k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db factor 0.1 0.919 -134.2 30.8 34.576 111.7 -39.2 0.011 29.6 0.722 -166.1 35.0 0.191 0.2 0.920 -157.3 25.3 18.445 99.7 -38.4 0.012 25.5 0.763 -174.1 31.9 0.336 0.3 0.921 -166.4 21.9 12.499 94.6 -37.7 0.013 26.7 0.771 -177.8 29.8 0.460 0.4 0.918 -171.4 19.4 9.372 91.5 -37.7 0.013 30.0 0.773 179.8 28.6 0.599 0.5 0.915 -174.0 17.8 7.792 88.8 -36.5 0.015 32.7 0.763 178.6 27.2 0.665 0.6 0.916 -176.7 16.3 6.537 86.6 -35.9 0.016 35.7 0.765 176.9 26.1 0.744 0.7 0.916 -178.9 15.0 5.596 84.7 -35.4 0.017 37.9 0.765 175.6 25.2 0.809 0.8 0.914 179.4 13.8 4.888 83.1 -34.9 0.018 40.0 0.764 174.9 24.3 0.871 0.9 0.919 178.1 12.8 4.370 81.1 -34.4 0.019 41.8 0.768 173.4 23.6 0.892 1 0.914 176.2 11.8 3.911 79.3 -34.0 0.020 43.0 0.762 172.2 22.9 0.963 1.5 0.912 170.2 8.3 2.596 72.2 -31.7 0.026 47.8 0.761 168.1 18.0 1.103 2 0.914 165.8 6.3 2.059 66.7 -30.2 0.031 49.2 0.766 163.8 15.9 1.142 2.5 0.910 164.7 5.8 1.940 65.6 -29.9 0.032 49.3 0.765 160.9 15.2 1.185 3 0.912 160.8 4.2 1.618 60.7 -28.6 0.037 49.0 0.761 156.6 13.6 1.210 4 0.913 154.4 2.3 1.296 52.9 -26.9 0.045 47.3 0.765 150.8 11.8 1.221 5 0.908 144.7 0.2 1.023 42.0 -24.4 0.060 43.2 0.756 143.0 9.4 1.236 6 0.903 134.5 -1.5 0.844 27.9 -22.5 0.075 34.8 0.745 141.1 7.6 1.233 7 0.906 125.5 -3.8 0.647 15.0 -21.9 0.080 25.7 0.676 129.9 5.3 1.392 8 0.904 115.1 -4.7 0.582 5.9 -20.6 0.093 20.3 0.670 113.3 4.1 1.430 9 0.902 105.3 -5.5 0.532 -6.4 -19.4 0.107 10.3 0.666 111.6 3.1 1.433 10 0.893 95.0 -5.8 0.513 -13.3 -18.8 0.115 7.5 0.710 100.7 2.7 1.416 11 0.881 84.1 -6.5 0.474 -22.0 -17.7 0.131 -1.9 0.756 88.2 1.9 1.388 12 0.873 73.6 -7.6 0.417 -32.9 -17.5 0.133 -8.5 0.746 84.9 0.5 1.577 13 0.847 63.9 -7.5 0.424 -40.6 -16.2 0.154 -13.9 0.772 75.7 0.2 1.507 14 0.844 55.4 -7.8 0.407 -52.7 -15.7 0.165 -22.0 0.802 66.3 0.1 1.407 15 0.827 47.4 -8.2 0.389 -63.7 -14.9 0.180 -29.7 0.793 63.2 -0.7 1.457 16 0.818 40.2 -8.9 0.357 -67.9 -14.6 0.187 -35.8 0.759 49.4 -1.9 1.637 17 0.799 32.9 -9.0 0.353 -81.4 -13.5 0.211 -43.1 0.786 36.5 -2.0 1.526 18 0.780 26.7 -9.3 0.344 -90.7 -12.5 0.236 -50.4 0.777 27.6 -2.7 1.549 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. figure 61. msg/mag & |s21| 2 vs. frequency at 3.5v 360ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 s21 msg mag
17 atf-501p8 typical scattering parameters, v ds = 5.5v, i ds = 280 ma freq. s 11 s 21 s 12 s 22 msg/mag k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db factor 0.1 0.914 -131.5 31.8 39.087 112.6 -38.4 0.012 29.6 0.618 -158.7 35.1 0.172 0.2 0.912 -155.7 26.4 20.961 100.1 -37.7 0.013 23.9 0.661 -170.0 32.1 0.307 0.3 0.914 -165.2 23.1 14.228 94.5 -37.1 0.014 24.1 0.670 -174.9 30.1 0.420 0.4 0.913 -170.5 20.6 10.678 91.1 -37.1 0.014 26.7 0.674 -177.9 28.8 0.550 0.5 0.909 -173.3 19.0 8.871 88.3 -36.5 0.015 29.0 0.662 -179.3 27.7 0.638 0.6 0.910 -176.0 17.4 7.417 86.0 -35.9 0.016 31.7 0.663 179.2 26.7 0.715 0.7 0.911 -178.2 16.1 6.365 83.9 -35.4 0.017 34.3 0.666 177.8 25.7 0.782 0.8 0.908 -179.8 14.9 5.577 81.8 -34.9 0.018 36.0 0.667 176.3 24.9 0.850 0.9 0.913 178.4 13.9 4.956 79.9 -34.4 0.019 38.0 0.664 175.7 24.2 0.878 1 0.907 176.7 13.0 4.446 78.0 -34.0 0.020 39.4 0.664 174.5 23.5 0.958 1.5 0.903 170.5 9.4 2.951 69.6 -32.0 0.025 44.5 0.672 170.1 18.4 1.141 2 0.905 166.2 7.4 2.331 63.5 -30.5 0.030 46.4 0.674 166.5 16.3 1.182 2.5 0.903 165.2 6.8 2.197 62.1 -30.2 0.031 47.0 0.674 164.0 15.7 1.222 3 0.903 161.0 5.2 1.822 56.7 -29.1 0.035 47.3 0.672 160.3 14.0 1.284 4 0.900 154.7 3.3 1.455 47.9 -27.3 0.043 46.7 0.685 155.2 12.0 1.307 5 0.902 145.0 1.1 1.129 35.9 -24.9 0.057 43.8 0.679 148.6 9.8 1.278 6 0.895 134.9 -0.8 0.916 20.6 -23.0 0.071 36.2 0.681 147.0 8.0 1.271 7 0.903 125.8 -3.2 0.695 6.8 -22.3 0.077 28.3 0.648 135.8 6.1 1.340 8 0.898 115.4 -4.2 0.616 -3.5 -20.8 0.091 22.9 0.641 119.2 4.5 1.401 9 0.898 105.8 -5.3 0.546 -16.3 -19.6 0.105 13.3 0.636 117.2 3.3 1.416 10 0.884 95.4 -6.0 0.499 -23.2 -18.9 0.114 10.9 0.694 106.2 2.4 1.459 11 0.871 84.6 -6.8 0.458 -31.5 -17.6 0.132 1.6 0.741 92.7 1.6 1.420 12 0.864 74.2 -8.3 0.386 -43.6 -17.3 0.137 -5.2 0.731 89.5 -0.2 1.655 13 0.849 64.8 -8.3 0.385 -49.9 -15.8 0.162 -11.5 0.768 79.6 -0.3 1.479 14 0.854 56.1 -8.7 0.366 -60.4 -15.2 0.174 -20.9 0.804 70.2 -0.2 1.332 15 0.841 47.7 -9.6 0.330 -68.9 -14.4 0.191 -29.9 0.807 66.7 -1.3 1.385 16 0.834 40.0 -10.0 0.317 -73.5 -14.1 0.198 -37.0 0.768 52.4 -2.3 1.536 17 0.824 31.9 -10.2 0.310 -83.2 -13.2 0.219 -45.0 0.792 39.7 -2.5 1.466 18 0.813 24.7 -10.7 0.291 -88.9 -12.4 0.240 -52.2 0.788 30.0 -3.5 1.533 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. figure 62. msg/mag & |s21| 2 vs. frequency at 5.5v 280ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 s21 msg mag
18 atf-501p8 typical scattering parameters, v ds = 5.5v, i ds = 200 ma freq. s 11 s 21 s 12 s 22 msg/mag k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db factor 0.1 0.921 -130.1 31.8 38.725 113.1 -37.7 0.013 29.6 0.615 -156.5 34.7 0.145 0.2 0.914 -155.0 26.4 20.822 100.3 -37.1 0.014 22.8 0.659 -168.9 31.7 0.274 0.3 0.914 -164.6 23.0 14.136 94.7 -36.5 0.015 22.7 0.669 -174.1 29.7 0.385 0.4 0.913 -170.1 20.5 10.611 91.3 -36.5 0.015 24.9 0.673 -177.3 28.5 0.510 0.5 0.909 -172.9 18.9 8.824 88.4 -35.4 0.017 26.8 0.662 -178.9 27.2 0.576 0.6 0.909 -175.7 17.4 7.375 86.0 -35.4 0.017 29.4 0.662 179.6 26.4 0.672 0.7 0.909 -178.1 16.0 6.329 83.9 -34.9 0.018 31.3 0.665 178.2 25.5 0.739 0.8 0.908 -179.7 14.9 5.549 81.8 -34.4 0.019 32.9 0.667 176.5 24.7 0.798 0.9 0.911 178.5 13.8 4.922 80.0 -34.0 0.020 35.3 0.662 176.0 23.9 0.843 1 0.909 176.8 12.9 4.418 78.0 -33.6 0.021 36.4 0.664 174.8 23.2 0.897 1.5 0.905 170.8 9.3 2.933 69.4 -31.7 0.026 41.7 0.673 170.3 18.8 1.079 2 0.907 166.3 7.3 2.322 63.4 -30.5 0.030 44.3 0.674 166.6 16.5 1.153 2.5 0.903 165.3 6.8 2.182 62.1 -30.2 0.031 44.5 0.673 164.1 15.7 1.208 3 0.906 161.2 5.2 1.815 56.5 -28.9 0.036 45.1 0.671 160.4 14.2 1.226 4 0.903 155.0 3.2 1.447 47.8 -27.3 0.043 44.7 0.684 155.3 12.1 1.273 5 0.904 145.1 1.0 1.123 35.9 -24.9 0.057 42.3 0.678 148.7 9.9 1.257 6 0.899 135.2 -0.8 0.909 20.3 -23.0 0.071 35.1 0.681 147.2 8.2 1.235 7 0.904 126.2 -3.2 0.693 6.5 -22.4 0.076 27.4 0.647 136.0 6.2 1.332 8 0.901 115.6 -4.3 0.608 -4.0 -20.9 0.090 22.2 0.640 119.4 4.6 1.386 9 0.896 106.2 -5.4 0.536 -15.9 -19.7 0.104 12.6 0.634 117.5 3.1 1.459 10 0.891 95.4 -6.1 0.497 -23.9 -18.9 0.113 10.2 0.692 106.3 2.6 1.408 11 0.877 85.0 -7.0 0.446 -32.3 -17.7 0.131 1.0 0.739 92.9 1.5 1.403 12 0.871 74.4 -8.3 0.386 -42.5 -17.4 0.135 -5.8 0.730 89.7 -0.1 1.625 13 0.851 64.9 -8.2 0.387 -49.0 -15.9 0.160 -11.8 0.767 79.8 -0.3 1.480 14 0.850 56.2 -8.8 0.364 -60.0 -15.3 0.172 -21.0 0.803 70.5 -0.3 1.364 15 0.839 48.0 -9.5 0.335 -67.9 -14.5 0.188 -29.9 0.805 66.9 -1.3 1.403 16 0.834 39.7 -10.2 0.309 -72.5 -14.2 0.195 -36.8 0.768 52.7 -2.5 1.585 17 0.827 32.2 -10.2 0.309 -82.4 -13.3 0.216 -44.6 0.792 39.9 -2.5 1.472 18 0.814 24.4 -10.5 0.298 -89.4 -12.5 0.238 -51.8 0.790 30.2 -3.2 1.510 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. figure 63. msg/mag & |s21| 2 vs. frequency at 5.5v 200ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 s21 msg mag
19 atf-501p8 typical scattering parameters, v ds = 5.5v, i ds = 360 ma freq. s 11 s 21 s 12 s 22 msg/mag k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. db factor 0.1 0.904 -132.0 31.8 38.785 113.0 -39.2 0.011 29.8 0.619 -159.9 35.5 0.198 0.2 0.910 -156.2 26.4 20.860 100.3 -38.4 0.012 24.8 0.662 -170.6 32.4 0.338 0.3 0.912 -165.4 23.0 14.161 94.7 -37.7 0.013 25.5 0.672 -175.3 30.4 0.459 0.4 0.912 -170.7 20.5 10.635 91.2 -37.1 0.014 27.8 0.675 -178.2 28.8 0.571 0.5 0.907 -173.5 18.9 8.834 88.4 -36.5 0.015 30.5 0.663 -179.5 27.7 0.666 0.6 0.909 -176.1 17.4 7.399 86.1 -35.9 0.016 33.4 0.664 178.9 26.7 0.741 0.7 0.909 -178.3 16.0 6.337 83.9 -35.4 0.017 35.7 0.666 177.6 25.7 0.808 0.8 0.907 179.9 14.9 5.557 81.9 -35.4 0.017 37.6 0.668 176.2 25.1 0.901 0.9 0.909 178.4 13.9 4.942 80.0 -34.9 0.018 39.7 0.665 175.5 24.4 0.943 1 0.906 176.7 12.9 4.429 78.0 -34.4 0.019 41.2 0.665 174.3 23.7 1.008 1.5 0.904 170.5 9.4 2.941 69.7 -32.0 0.025 46.2 0.672 170.1 18.4 1.150 2 0.904 166.1 7.3 2.325 63.6 -30.8 0.029 47.9 0.676 166.5 16.2 1.225 2.5 0.900 165.1 6.8 2.191 62.2 -30.2 0.031 48.4 0.675 163.9 15.5 1.254 3 0.905 161.0 5.2 1.817 56.6 -29.1 0.035 48.6 0.674 160.2 14.0 1.278 4 0.900 155.0 3.3 1.456 48.2 -27.5 0.042 47.4 0.686 155.1 12.0 1.329 5 0.904 144.9 1.1 1.130 35.7 -24.9 0.057 44.4 0.680 148.5 9.9 1.267 6 0.897 134.8 -0.8 0.913 20.7 -23.0 0.071 36.8 0.683 146.9 8.0 1.264 7 0.902 125.7 -3.2 0.695 7.3 -22.3 0.077 28.9 0.649 135.8 6.0 1.359 8 0.899 115.5 -4.3 0.609 -3.7 -20.8 0.091 23.4 0.643 119.1 4.5 1.402 9 0.893 105.9 -5.3 0.544 -16.0 -19.6 0.105 13.8 0.636 117.1 3.1 1.470 10 0.886 95.4 -6.0 0.499 -23.1 -18.9 0.114 11.7 0.696 106.1 2.4 1.447 11 0.867 85.0 -6.8 0.455 -31.7 -17.5 0.133 2.3 0.743 92.6 1.4 1.439 12 0.871 75.0 -8.2 0.389 -43.4 -17.2 0.138 -4.6 0.732 89.3 0.0 1.589 13 0.854 65.6 -8.2 0.387 -49.9 -15.7 0.164 -11.0 0.769 79.4 -0.2 1.436 14 0.855 56.8 -8.9 0.360 -61.2 -15.1 0.176 -20.4 0.805 70.0 -0.3 1.323 15 0.845 48.1 -9.6 0.330 -68.7 -14.3 0.192 -29.6 0.806 66.4 -1.3 1.371 16 0.842 40.7 -10.0 0.315 -72.5 -14.0 0.199 -36.7 0.769 52.1 -2.2 1.502 17 0.833 32.6 -10.2 0.309 -82.1 -13.2 0.220 -44.6 0.792 39.4 -2.4 1.436 18 0.826 25.5 -10.5 0.299 -87.9 -12.3 0.242 -51.8 0.789 29.7 -3.1 1.457 notes: 1. s parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. figure 64. msg/mag & |s21| 2 vs. frequency at 5.5v 360ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 s21 msg mag
20 2 x 2 lpcc (jedec dfp-n) package dimensions ordering information part number no. of devices container atf-501p8-tr1 3000 7 reel atf-501p8-tr2 10000 13 reel ATF-501P8-BLK 100 antistatic bag device models refer to agilent s web site www.agilent.com/view/rf d e 8 7 6 5 a d1 e1 p e pin1 r l b dimensions are in millimeters dimensions min. 0.70 0 0.203 ref 0.225 1.9 0.65 1.9 1.45 0.50 bsc nom. 0.75 0.02 0.203 ref 0.25 2.0 0.80 2.0 1.6 0.50 bsc max. 0.80 0.05 0.203 ref 0.275 2.1 0.95 2.1 1.75 0.50 bsc symbol a a1 a2 b d d1 e e1 e 1 pin1 2 3 4 0px top view end view end view bottom view a2 a a1
21 device orientation pcb land pattern and stencil design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) 0.25 (9.84) 0.50 (19.68) 0.28 (10.83) 0.60 (23.62) 0.20 (7.87) pin 1 solder mask rf transmission line 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) 1.60 (62.99) + 2.72 (107.09) 0.63 (24.80) 0.22 (8.86) 0.32 (12.79) 0.50 (19.68) 0.25 (9.74) 0.63 (24.80) stencil layout (top view) pcb land pattern (top view) notes: typical stencil thickness is 5 mils. measurements are in millimeters (mils). 0.72 (28.35) pin 1 1.54 (60.61) user feed direction cover tape carrier tape reel 8 mm 4 mm 0px 0px 0px 0px
tape dimensions p 0 p f w d 1 e p 2 a 0 10 max t 1 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.30 0.05 2.30 0.05 1.00 0.05 4.00 0.10 1.00 + 0.25 0.091 0.004 0.091 0.004 0.039 0.002 0.157 0.004 0.039 + 0.002 cavity diameter pitch position d p 0 e 1.50 0.10 4.00 0.10 1.75 0.10 0.060 0.004 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 + 0.30 0.254 0.02 0.315 0.012 8.00 C 0.10 0.315 0.004 0.010 0.0008 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.0004 cover tape d ++ t t 10 max b 0 www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (65) 6756 2394 india, australia, new zealand: (65) 6755 1939 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (65) 6755 2044 taiwan: (65) 6755 1843 data subject to change. copyright ? 2004 agilent technologies, inc. august 24, 2004 5988-9767en

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